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ADVANCED LINEAR DEVICES, INC.
ALD110804/ALD110904
VGS(th)= +0.4V
e
TM
EPAD
EN
(R)
AB
LE
D
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD(R) MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION ALD110804/ALD110904 are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD's proven EPAD(R) CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110804/ALD110904 MOSFETs are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits. The ALD110804/ALD110904 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD110804/ALD110904 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25C is = 3mA/30pA = 100,000,000. FEATURES * Enhancement-mode (normally off) * Precision Gate Threshold Voltage of +0.40V * Matched MOSFET to MOSFET characteristics * Tight lot to lot parametric control * Low input capacitance * VGS(th) match (VOS) to 10mV * High input impedance -- 1012 typical * Positive, zero, and negative VGS(th) temperature coefficient * DC current gain >108 * Low input and output leakage currents ORDERING INFORMATION Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin Plastic Dip Package ALD110804PC 16-Pin SOIC Package ALD110804SC 8-Pin Plastic Dip Package ALD110904PA 8Pin SOIC Package ALD110904SA APPLICATIONS
* Ultra low power (nanowatt) analog and digital circuits * Ultra low operating voltage(<0.4V) circuits * Sub-threshold biased and operated circuits * Precision current mirrors and current sources * Nano-Amp current sources * High impedance resistor simulators * Capacitive probes and sensor interfaces * Differential amplifier input stages * Discrete Voltage comparators and level shifters * Voltage bias circuits * Sample and Hold circuits * Analog and digital inverters * Charge detectors and charge integrators * Source followers and High Impedance buffers * Current multipliers * Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110804 N/C* GN1 DN1 S12 VDN4 GN4 N/C* 1 2 3 4 5 6 7 8 VPC, SC PACKAGES
V-
V-
16 15
N/C* GN2 DN2 V+ S34 DN3 GN3 N/C*
M1
M2
14 V+ 13 12
VM4 M3
11 10 V9
ALD110904 VV-
N/C*
1 2 3 4
8 7
N/C*
GN1 DN1 S12
GN2 DN2 V-
M1
M2
6 V5
PA, SA PACKAGES *N/C pins are internally connected. Connect to V- to reduce noise
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 (c)2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS Gate-Source voltage, VGS Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds 10.6V 10.6V 500 mW 0C to +70C -65C to +150C +260C
OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = GND TA = 25C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110804 / ALD110904 Parameter Gate Threshold Voltage Offset Voltage VGS(th)1-VGS(th)2 Offset VoltageTempco GateThreshold Voltage Tempco Symbol VGS(th) VOS TC VOS TCVGS(th) Min 0.38 Typ 0.40 2 5 -1.7 0.0 +1.6 12.0 3.0 Max 0.42 10 Unit V mV V/ C mV/ C VDS1 = VDS2 ID = 1A ID = 20A, VDS = 0.1V ID = 40A VGS = + 9.7V VGS = + 4.2V VDS = +5V VGS = + 4.2V VDS = + 9.2V Test Conditions IDS =1A VDS = 0.1V
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
1.4
mmho
Transconductance Mismatch Output Conductance
GFS GOS RDS (ON)
1.8 68
% mho VGS =+4.2V VDS = +9.2V VDS = 0.1V VGS = +4.2V
Drain Source On Resistance
500
Drain Source On Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1
RDS (ON) BVDSX IDS (OFF) IGSS CISS CRSS ton toff
0.5
%
10
V
IDS = 1.0A VGS = -0.8V VGS = -0.8V VDS =10V, TA = 125C VDS = 0V VGS = 10V TA =125C
10
100 4 30 1
pA nA pA nA pF pF ns ns dB
Gate Leakage Current1
3
Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes:
1
2.5 0.1 10 10 60
V+ = 5V RL= 5K V+ = 5V RL= 5K f = 100KHz
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2

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